Datasheet

Electrical characteristics ST7LITE20F2 ST7LITE25F2 ST7LITE29F2
134/170 DocID8349 Rev 7
13.7 EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
13.7.1 Functional EMS (Electro Magnetic Susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electro magnetic events until a failure occurs (indicated by
the LEDs).
ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the
device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
DD
and
V
SS
through a 100pF capacitor, until a functional disturbance occurs. This test
conforms with the IEC 1000-4-4 standard.
t
prog
Programming time for 1~32 bytes
(1)
T
A
=−40 to +85°C 510ms
Programming time for 1.5 kBytes T
A
=+25°C 0.24 0.48 s
t
RET
Data retention
(2)
T
A
=+55°C
(3)
20 −−years
N
RW
Write erase cycles
T
A
=+25°C 10K
(4)
−−cycles
I
DD
Supply current
Read / Write / Erase modes
f
CPU
= 8MHz, V
DD
= 5.5V
−−2.6
(5)
mA
No Read/No Write mode −−100 μA
Power down mode / HALT 00.1μA
1. Up to 32 bytes can be programmed at a time.
2. Data based on reliability test results and monitored in production.
3. The data retention time increases when the T
A
decreases.
4. Design target value pending full product characterization.
5. Guaranteed by Design. Not tested in production.
Table 74. Flash program memory
Symbol Parameter Conditions Min Typ Max Unit
Table 75. EEPROM data memory
Symbol Parameter Conditions Min Typ Max Unit
V
DD
Operating voltage for EEPROM
write/erase
2.4 5.5 V
t
prog
Programming time for 1~32 bytes T
A
=−40 to +85°C 510ms
t
ret
Data retention
(1)
T
A
=+55°C
(2)
20 −−years
N
RW
Write erase cycles
T
A
=+25°C 300K
(3)
−−cycles
1. Data based on reliability test results and monitored in production.
2. The data retention time increases when the
T
A
decreases.
3. Design target value pending full product characterization.