Datasheet

NTAG203 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet
COMPANY PROPRIETARY
Rev. 3.0 — 17 October 2011
213830 5 of 30
NXP Semiconductors
NTAG203
NFC Forum Type 2 Tag compliant IC with 144 bytes user memory
7. Mechanical specification
Remark: Substrate is connected to VSS.
Table 4. Wafer specifications
Wafer
diameter 8” wafer, 200 mm unsawn
min: 200 mm
typ: 206 mm
max: 210 mm
thickness
120 m  15 m
flatness not applicable
Potential Good Dies per Wafer (PGDW) 61942
Sawing method laser dicing
Wafer backside
material Si
treatment ground and stress relieve
roughness
R
a
max 0.2 m
R
t
max 2 m
Chip dimensions
chip size
0.673 mm  0.673 mm
scribe lines x-line:15 m  5 m
y-line:15 m  5 m
Passivation
type sandwich structure
material Nitride
thickness 1.75 m
Au bump
material
> 99.9 % pure Au
hardness 35 – 80 HV 0.005
shear strength > 70 MPa
height 18 m
height uniformity
within a die 2 m
within a wafer 3 m
wafer to wafer 4 m
flatness 1.5 m
size
LA, LB 60 m  60 m
TP1, TP2, VSS 60 m  60 m
size variation 5 m
under bump metallization sputtered TiW