Datasheet

NTAG203 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet
COMPANY PROPRIETARY
Rev. 3.0 — 17 October 2011
213830 23 of 30
NXP Semiconductors
NTAG203
NFC Forum Type 2 Tag compliant IC with 144 bytes user memory
9. Limiting values
[1] Stresses above one or more of the limiting values may cause permanent damage to the device.
[2] Exposure to limiting values for extended periods may affect device reliability.
[3] MIL Standard 883-C method 3015; Human body model: C = 100 pF, R = 1.5 k.
10. Characteristics
10.1 Electrical characteristics
[1] Stresses above one or more of the limiting values may cause permanent damage to the device.
[2] These are stress ratings only. Operation of the device at these or any other conditions above those given in the Characteristics section
of the specification is not implied.
[3] Exposure to limiting values for extended periods may affect device reliability.
[4] LCR meter HP 4285, T
amb
= 22 C, Cp-D, f
i
= 13.56 MHz, 2Veff.
11. Package outline
This section is not applicable for this device.
Table 18. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1][2]
Symbol Parameter Conditions Min Max Unit
I
I
input current - 30 mA
T
stg
storage temperature 55 +125 C
T
amb
ambient temperature 25 +70 C
V
ESD
electrostatic discharge
voltage
measured on pin
LA-LB
[3]
2-kV
Table 19. Characteristics
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1][2][3]
Symbol Parameter Conditions Min Typ Max Unit
f
i
input frequency - 13.56 - MHz
C
i
input capacitance 50 pF version (bare silicon
and HWSON8)
[4]
44 50 56 pF
EEPROM characteristics
t
cy(W)
write cycle time - 4.1 - ms
t
ret
retention time T
amb
= 22 C 5--year
N
endu(W)
write endurance T
amb
= 22 C 10000 - - cycle