Datasheet

CP2104
Rev. 1.2 5
2. Electrical Characteristics
Table 1. Absolute Maximum Ratings
Parameter Conditions Min Typ Max Units
Ambient Temperature Under Bias –55 — 125 °C
Storage Temperature –65 — 150 °C
Voltage on RST
, GPIO or UART Pin with respect to
GND
V
IO
> 2.2 V
V
IO
< 2.2 V
–0.3
–0.3
—
—
5.8
V
IO
+
3.6
V
Voltage on VBUS with respect to GND V
DD
> 3.0 V
V
DD
not powered
–0.3
–0.3
—
—
5.8
V
DD
+
3.6
V
Voltage on V
DD
or V
IO
with respect to GND –0.3 — 4.2 V
Maximum Total Current through V
DD
, V
IO
, and GND — — 500 mA
Maximum Output Current Sunk by RST
or any I/O
pin
——100mA
Note: Stresses above those listed may cause permanent damage to the device. This is a stress rating only, and functional
operation of the devices at or exceeding the conditions in the operation listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods may affect device reliability.
Table 2. Global DC Electrical Characteristics
V
DD
= 3.0 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter Conditions Min Typ Max Units
Digital Supply Voltage (V
DD
) 3.0 — 3.6 V
Digital Port I/O Supply Voltage (V
IO
)1.8—V
DD
V
Voltage on V
PP
with respect to GND during a
ROM programming operation
V
IO
> 3.3 V 5.75 — V
IO
+
3.6
V
Capacitor on V
PP
for ROM programming — 4.7 — µF
Supply Current
1
Normal Operation;
V
REG
Enabled
— 17.0 18.5 mA
Supply Current
1
Suspended;
V
REG
Enabled
—100200µA
Supply Current—USB Pull-up
2
—200228µA
Specified Operating Temperature Range –40 — +85 °C
Notes:
1. If the device is connected to the USB bus, the USB Pull-up Current should be added to the supply current for total
supply current.
2. The USB Pull-up supply current values are calculated values based on USB specifications.