Datasheet

MB85RS64V
18 DS501-00015-4v0-E
■ NOTE ON USE
We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed.
■ ESD AND LATCH-UP
• Current method of Latch-Up Resistance Test
Note : The voltage V
IN is increased gradually and the current IIN of 300 mA at maximum shall flow.
Confirm the latch up does not occur under I
IN = ± 300 mA.
In case the specific requirement is specified for I/O and I
IN cannot be 300 mA, the voltage shall be
increased to the level that meets the specific requirement.
Test DUT Value
ESD HBM (Human Body Model)
JESD22-A114 compliant
MB85RS64VPNF-G-JNE1
≥
|2000 V|
ESD MM (Machine Model)
JESD22-A115 compliant
≥
|200 V|
ESD CDM (Charged Device Model)
JESD22-C101 compliant
≥
|1000 V|
Latch-Up (I-test)
JESD78 compliant
⎯
Latch-Up (V
supply overvoltage test)
JESD78 compliant
⎯
Latch-Up (Current Method)
Proprietary method
⎯
Latch-Up (C-V Method)
Proprietary method
≥
|200 V|
A
VDD
VSS
DUT
V
I IN
V IN
+
-
Test terminal
Protection Resistor
VDD
(Max.Rating)
Reference
terminal