Datasheet

Signal Description
54 Datasheet, Volume 1
6.1 System Memory Interface
Table 6-2. Memory Channel A
Signal Name Description Direction Type
SA_BS[2:0]
Bank Select: These signals define which banks are
selected within each SDRAM rank.
ODDR3
SA_CAS#
CAS Control Signal: This signal is used with SA_RAS# and
SA_WE# (along with SA_CS#) to define the SDRAM
Commands.
ODDR3
SA_CK#[1:0]
SDRAM Inverted Differential Clock: Channel A SDRAM
Differential clock signal-pair complement.
ODDR3
SA_CK#[3:2]
SDRAM Inverted Differential Clock: Channel A SDRAM
Differential clock signal-pair complement.
ODDR3
SA_CK[1:0]
SDRAM Differential Clock: Channel A SDRAM Differential
clock signal pair.
The crossing of the positive edge of SA_CKx and the
negative edge of its complement SA_CKx# are used to
sample the command and control signals on the SDRAM.
ODDR3
SA_CK[3:2]
SDRAM Differential Clock: Channel A SDRAM Differential
clock signal pair.
The crossing of the positive edge of SA_CKx and the
negative edge of its complement SA_CKx# are used to
sample the command and control signals on the SDRAM.
ODDR3
SA_CKE[3:0]
Clock Enable: (1 per rank). These signals are used to:
• Initialize the SDRAMs during power-up
• Power-down SDRAM ranks
• Place all SDRAM ranks into and out of self-refresh
during STR
ODDR3
SA_CS#[3:0]
Chip Select: (1 per rank) These signals are used to select
particular SDRAM components during the active state.
There is one Chip Select for each SDRAM rank.
ODDR3
SA_DM[7:0]
Data Mask: These signals are used to mask individual
bytes of data in the case of a partial write, and to
interrupt burst writes.
When activated during writes, the corresponding data
groups in the SDRAM are masked. There is one
SA_DM[7:0] for every data byte lane.
ODDR3
SA_DQ[63:0]
Data Bus: Channel A data signal interface to the SDRAM
data bus.
I/O DDR3
SA_DQS[8:0]
SA_DQS#[8:0]
Data Strobes: SA_DQS[8:0] and its complement signal
group make up a differential strobe pair. The data is
captured at the crossing point of SA_DQS[8:0] and its
SA_DQS#[8:0] during read and write transactions.
I/O DDR3
SA_ECC_CB[7:0] Data Lines for ECC Check Byte. I/O DDR3
SA_MA[15:0]
Memory Address: These signals are used to provide the
multiplexed row and column address to the SDRAM.
ODDR3
SA_ODT[3:0] On Die Termination: Active Termination Control O DDR3
SA_RAS#
RAS Control Signal: This signal is used with SA_CAS# and
SA_WE# (along with SA_CS#) to define the SRAM
Commands.
ODDR3
SA_WE#
Write Enable Control Signal: This signal is used with
SA_RAS# and SA_CAS# (along with SA_CS#) to define
the SDRAM Commands.
ODDR3