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ManualsBrands600 V CoolMOS™ P6 01_00 ManualsOtherJul 15, 2015

1 Revision 1.1, 2015-06-29

About this document

Scope and purpose

This Application Note describes the characteristics of CoolMOS™ P6, the seventh technology platform of

Infineon’s high voltage power MOSFETs designed according to the revolutionary Superjunction (SJ)

principle. CoolMOS™ P6 will be described in reference to the existing CoolMOS™ generations both from a

technology viewpoint and application performance. Design guidelines will be given to enable CoolMOS

optimized performance.

Intended audience

This document is intended for design engineers who want to improve their high voltage power conversion

applications.

Table of Contents

1 Introduction ................................................................................................................................... 3

1.1 Features and Benefits ......................................................................................................................... 3

1.2 Target Applications ............................................................................................................................. 3

1.3 Superjunction (SJ) Principle ............................................................................................................... 4

2 Technology parameters ................................................................................................................. 6

2.1 Gate charge (Q

)................................................................................................................................... 6

2.2 High Gate threshold voltage (V

) ........................................................................................................ 6

2.3 Energy stored in output capacitance (E

oss

) ......................................................................................... 7

2.4 Integrated Gate Resistor (R

)............................................................................................................... 8

2.5 dv/dt at turn-off in a 300 W PC Silverbox ............................................................................................ 9

2.6 E

and E

off

P6 vs. E6 vs. CP ................................................................................................................ 10

3 Measurement results .................................................................................................................... 12

3.1 Efficiency measurement in a 300 W PC Silverbox in CCM PFC ......................................................... 12

3.2 Efficiency measurement in a 200 W PC Silverbox in LLC stage ........................................................ 13

3.3 Ringing measurements ..................................................................................................................... 15

600 V CoolMOS™ P6

S J M O S F E T f o r S e r v e r , T e l e c o m , P C P o w e r a n d C o n s u m e r

Steiner Alois

Catly Johnald

Application Note

Summary of content (24 pages)

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600 V Co ol MOS™ P 6 SJ MOSFET for Server, Telecom, PC Power and Consumer Steiner Alois Catly Johnald Application Note About this document Scope and purpose This Application Note describes the characteristics of CoolMOS™ P6, the seventh technology platform of Infineon’s high voltage power MOSFETs designed according to the revolutionary Superjunction (SJ) principle. CoolMOS™ P6 will be described in reference to the existing CoolMOS™ generations both from a technology viewpoint and application performance.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Introduction 3.4 3.5 Brownout measurements ................................................................................................................. 17 Hard commutation on conducting body diode ............................................................................... 18 4 4.1 4.2 Design Guideline for using 600 V CoolMOS™ P6............................................................................
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Introduction 1 Introduction The new 600 V CoolMOSTM P6 is the seventh technology platform of Infineon’s high voltage power MOSFETs designed according to the revolutionary Superjunction (SJ) principle.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Introduction Application PFC PWM Consumer Boost-Stage LLC All the features and benefits of 600 V P6 MOSFETs in connection with the target applications and topologies will be analyzed in section 3. 1.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Introduction Figure 2 Cross section of standard MOSFET (left) and SJ MOSFET (right) [5] “The SJ principle gives us the opportunity to create Best-in-Class types, which have not been possible before such as a 100 mΩ/600 V part in a TO-220 package. Furthermore it allows making parts with very low capacitances for a given RDS(on) as the silicon chip is much smaller than for a conventional power MOSFET.
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00 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Technology parameters 2 Technology parameters 2.1 Gate charge (Qg) One of the most important improvements of CoolMOSTM P6 is in device gate charge (Qg) reduction which brings benefits especially in light load conditions due to reduced driving losses. P6 will offer a 30% Qg reduction in comparison with E6 which mainly comes from the reduction of the plateau charge.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Technology parameters Transconductance 70 60 ID[A] 50 40 IPP60R190E6 30 IPP60R190P6 20 IPP60R199CP 10 0 0 5 10 15 20 VGS[V] Figure 4 Vth comparison 600 V P6 vs. E6 vs. CP Our CP and E6 technologies are defined with the typical Vth at 3 V. On this characteristic you can see that the P6-technology will show an increased Vth to typical 4 V.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Technology parameters Eoss and Qoss comparison 80 4,5 70 4 3,5 60 2,5 40 2 CP_Qoss[nC] P6_Qoss[nC] E6_Qoss[nC] CP_Eoss[µJ] P6_Eoss[µJ] E6_Eoss[µJ] 30 20 10 Eoss [µJ] Qoss [nC] 3 50 1,5 1 0,5 0 0 0 100 200 300 400 500 Voltage VDS [V] Figure 5 Eoss comparison 600 V P6 vs. E6 vs. CP 2.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Technology parameters 18 C6 E6 P6 16 14 Rg[Ω] 12 10 8 6 4 2 0 160 190 230 280 330 380 600 RDS(on)[mΩ] Figure 6 Internal gate resistor for CoolMOS™ C6, E6 and P6 series 2.5 dv/dt at turn-off in a 300 W PC Silverbox In Figure 7 is the measured dv/dt comparison between E6, P6, and CP in the RDS(on),max range of 190 mΩ. CP has a maximum dv/dt of 50 V/ns and a high slope.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Technology parameters 50 dv/dt[V/ns] 40 30 20 10 Cp P6 E6 0 30 20 10 5 1 Rg,ext[Ω] Figure 7 dv/dt at turn-off for CoolMOS™ 600 V P6, E6 and CP series 2.6 Eon and Eoff P6 vs. E6 vs. CP Figure 8 shows the result of Eon and Eoff characterization measurements for E6, P6 and CP at 5 A and 15 A drain current load under VGS=12 V and VDS=400 V in the range of gate resistor (Rg) from 3.4 Ω to 31.2 Ω.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Technology parameters Figure 8 Eon and Eoff comparison IPP60R190P6 vs. IPP60R190E6 and IPP60R199CP at ID=5 A and ID=15 A and test ambient temperature (TC) of 25°C Application Note 11 Revision 1.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Measurement results 3 Measurement results In this section real application measurements will be showed to demonstrate the benefits CoolMOS™ P6 in hard- and soft-switching applications. 3.1 Efficiency measurement in a 300 W PC Silverbox in CCM PFC In this measurement the 600 V P6 is compared to E6 and CP in the 190 mΩ RDS(on) range.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Measurement results Efficiency difference Low Line 0,4 0,3 Difference [%] 0,2 0,1 0 -0,1 -0,2 -0,3 IPP60R199CP IPP60R190P6 IPP60R190E6 -0,4 0 50 100 150 200 250 300 350 Pout [W] Figure 10 600 V P6 vs. E6 vs. CP comparison in delta efficiency This plug and play measurement shows the benefit of CoolMOS P6 in comparison to CoolMOS™ E6 and CoolMOS™ CP.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Measurement results Efficiency Low Line 96 95 94 Efficiency [%] 93 92 91 90 IPP60R299CP 89 IPP60R280P6 88 IPP60R280E6 87 0 50 100 150 200 250 Pout[W] Efficiency difference Low Line 0,4 0,3 0,2 Difference [%] 0,1 0 -0,1 -0,2 -0,3 -0,4 -0,5 -0,6 -0,7 IPP60R299CP IPP60R280P6 IPP60R280E6 -0,8 -0,9 0 50 100 150 200 250 Pout [W] Figure 11 600 V P6 vs. E6 vs.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Measurement results Figure 12 600 V E6 vs. P6 comparison in turn-off Figure 12 show VGS, VDS, and ID switching waveforms of P6 and E6. The miller plateau of P6 is much shorter than that of E6 to provide fast turn off. This reduction in based on Qg reduction of 30%. Due to the high Vth, a earlier turn-off and reduced turn-off time, lower losses are observed and it help to improve the power conversion efficiency. 3.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Measurement results Ringing Measurements @ Rg,ext=5 Ω and Cgd=7,2 pF 50 40 20 Datasheetlimitation +-30V Gate Peak Voltage [V] 30 10 0 0 10 20 30 40 50 60 -10 -20 -30 -40 -50 Choke Current [A] Figure 13 600 V P6 vs. E6 vs. CP comparison in ringing tendency Application Note 16 Revision 1.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Measurement results Figure 14 600 V P6 vs. E6 vs. CP comparison in ringing tendency Figure 14 shows typical switching waveform of IPP60R190P6 in a PFC. This test circuit configured with an additional external gate to drain capacitance exhibiting 7.2 pF for capacitive coupling between gate and drain emulating PCB parasitic capacitance.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Measurement results CoolMOS™ P6 offers reduced Qg and low integrated Rg which enable fast switching. This provides low turn-on and turn-off losses. The switching losses contribution in the total power loss of the MOSFET is reduced in the case of P6 compared to C3 and E6 for the same RDS(on).
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Measurement results 700 due to high dIrr/dt VDS(max) Overshoot [V] 800 600 500 400 IPP60R190P6 300 IPP60R190E6 200 IPP60R199CP 100 0 0 1 2 3 4 5 6 Forward Current IF [A] through the body diode Figure 16 Hard commutation on conduction body diode comparison 600 V P6 vs. E6 vs. CP Figure 15 shows the VDS(max) overshoot due to high dirr/dt in a commutation.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Design Guideline for using 600 V CoolMOS™ P6 4 Design Guideline for using 600 V CoolMOS™ P6 In the following sections we will give some guidelines how to use the CoolMOSTM P6 in the best way to enable an optimized performance . 4.1 Minimum external gate resistor (Rg,ext) In well designed power supply we recommend to use a very low ohmic external resistor in the range of minimum 5 Ω for turn-on and zero ohm for turn-off.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Portfolio 5 Portfolio CoolMOS™ P6 series follows the same naming guidelines as already established with the C6 series e.g. IPP60R190C6, where “I” stands for Infineon Technologies, “P” for power MOSFETs, “P” for the package TO220, “60” for the voltage class (divided by 10), “R190” for the on-state resistance in Ohms and P6 for the name of the series. Table 3 shows the portfolio of CoolMOS™ P6.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer References 6 References [1] T. Fujihira: “Theory of Semiconductor Superjunction Devices”, Jpn. J. Appl. Phys., Vol.36, pp. 62546262, 1997 [2] A.W. Ludikhuize: “A review of the RESURF technology”, Proc. ISPSD 2000, pp. 11-18 [3] X. B. Chen and C. Hu, “Optimum doping profile of power MOSFET’s epitaxial Layer.”, IEEE Trans. Electron Devices, vol. ED-29, pp. 985-987, 1982 [4] G. Deboy, F. Dahlquist, T. Reiman and M.
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600 V Superjunction MOSFET SJ MOSFET for Server, Telecom, PC Power and Consumer Useful Links and Material 7 Useful Links and Material  Webpage – 600 V CoolMOS™ P6 http://www.infineon.com/P6  Product Brief – 600 V CoolMOS™ P6 - English http://www.infineon.com/dgdl/Infineon-Product_Brief_600V_CoolMOS_P6-PB-v02_00EN.pdf?fileId=db3a30433acf32c9013adf1967d312ad  Product Brief – 600 V CoolMOS™ P6 - Japanese http://www.infineon.com/dgdl/Infineon-ProductBrief_PowerMOSFETs_CoolMOSP6_Japanese-PBv01_00-JA.
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